Surface properties of annealed semiconducting β-Ga2O3 (100)...

Applied Surface Science 2015 / 09 Vol. 349

Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy

Navarro-Quezada, A., Galazka, Z., Alamé, S., Skuridina, D., Vogt, P., Esser, N.
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Volume:
349
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2015.04.225
Date:
September, 2015
File:
PDF, 1.69 MB
english, 2015
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