Formation of Ge0 and GeOx nanoclusters in Ge+-implanted...

Applied Surface Science 2015 / 09 Vol. 349

Formation of Ge0 and GeOx nanoclusters in Ge+-implanted SiO2/Si thin-film heterostructures under rapid thermal annealing

Zatsepin, A.F., Zatsepin, D.A., Zhidkov, I.S., Kurmaev, E.Z., Fitting, H.-J., Schmidt, B., Mikhailovich, A.P., Lawniczak-Jablonska, K.
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Volume:
349
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2015.05.090
Date:
September, 2015
File:
PDF, 806 KB
english, 2015
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