Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping
Dhayalan, Sathish Kumar, Loo, Roger, Hikavyy, Andriy, Rosseel, Erik, Bender, Hugo, Richard, Olivier, Vandervorst, WilfriedVolume:
426
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2015.05.019
Date:
September, 2015
File:
PDF, 3.23 MB
english, 2015