Effect of AlN buffer layer thickness on the properties of...

Materials Science in Semiconductor Processing 2015 / 11 Vol. 39

Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

Yang, Weijia, Wang, Wenliang, Liu, Zuolian, Li, Guoqiang
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Volume:
39
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.05.046
Date:
November, 2015
File:
PDF, 2.75 MB
english, 2015
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