Improved multi-recessed 4H–SiC MESFETs with double-recessed p-buffer layer
Jia, Hujun, Zhang, Hang, Luo, Yehui, Yang, ZhihuiVolume:
40
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.07.045
Date:
December, 2015
File:
PDF, 1.31 MB
english, 2015