Low-temperature reduction of Ge oxide by Si and SiH4 in...

Solid-State Electronics 2015 / 08 Vol. 110

Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

Minami, Kaichiro, Moriya, Atsushi, Yuasa, Kazuhiro, Maeda, Kiyohiko, Yamada, Masayuki, Kunii, Yasuo, Niwano, Michio, Murota, Junichi
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Volume:
110
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.01.011
Date:
August, 2015
File:
PDF, 1.19 MB
english, 2015
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