Formation of multiple dislocations in Si solid-phase...

Computational Materials Science 2015 / 06 Vol. 104

Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

Shen, T.M., Wang, S.J., Tung, Y.T., Hwang, R.L., Wu, C.C., Wu, Jeff, Diaz, Carlos H.
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Volume:
104
Language:
english
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2015.04.009
Date:
June, 2015
File:
PDF, 4.25 MB
english, 2015
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