InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions
Unil Perera, A.G., Lao, Yan-Feng, Wolde, Seyoum, Zhang, Y.H., Wang, T.M., Kim, J.O., Schuler-Sandy, Ted, Tian, Zhao-Bing, Krishna, S.S.Volume:
70
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2014.10.016
Date:
May, 2015
File:
PDF, 726 KB
english, 2015