Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs2 grown by modified Vertical Bridgman method
Huang, Wei, Zhao, Beijun, Zhu, Shifu, He, Zhiyu, Chen, Baojun, Zhen, Zhen, Pu, YunxiaoLanguage:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2015.06.255
Date:
August, 2015
File:
PDF, 5.95 MB
english, 2015