Impact of strain on hole mobility in the inversion layer of...

Thin Solid Films 2015 / 06 Vol. 584

Impact of strain on hole mobility in the inversion layer of PMOS device with SiGe alloy thin film

Cheng, S.-Y., Chen, K.-T., Chang, S.T.
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Volume:
584
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2015.01.047
Date:
June, 2015
File:
PDF, 732 KB
english, 2015
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