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AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrate
Lorenzzi, J., Soulière, V., Cauwet, F., Carole, D., Ferro, G., Ferro, Gabriel, Siffert, PaulYear:
2010
Language:
english
DOI:
10.1063/1.3518276
File:
PDF, 963 KB
english, 2010