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AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers
Jegenyes, N., Marinova, M., Zoulis, G., Lorenzzi, J., Andreadou, A., Mantzari, A., Soulière, V., Juillaguet, S., Camassel, J., Polychroniadis, E. K., Ferro, G., Ferro, Gabriel, Siffert, PaulYear:
2010
Language:
english
DOI:
10.1063/1.3518304
File:
PDF, 694 KB
english, 2010