AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - TEM investigation of the influence of the Ga-doping on the structure of 3C-SiC layers grown on 6H-SiC substrate by VLS mechanism

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