AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Effect of Helium implantation on gettering and electrical properties of 4H-SiC epilayers
Biondo, Stéphane, Regula, Gabrielle, Ottaviani, Laurent, Palais, Olivier, Pichaud, Bernard, Matsuo, Jiro, Kase, Masataka, Aoki, Takaaki, Seki, ToshioYear:
2011
Language:
english
DOI:
10.1063/1.3548363
File:
PDF, 1.82 MB
english, 2011