Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4 × 6 surface with trimethylaluminum and water as precursors
Huang, M. L., Chang, Y. H., Lin, T. D., Lin, H. Y., Liu, Y. T., Pi, T. W., Hong, M., Kwo, J.Volume:
101
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4767129
File:
PDF, 2.05 MB
english, 2012