Remarkable charge-trapping efficiency of the memory device with (TiO2)0.8(Al2O3)0.1 composite charge-storage dielectric
Jiang, K., Ou, X., Lan, X. X., Cao, Z. Y., Liu, X. J., Lu, W., Gong, C. J., Xu, B., Li, A. D., Xia, Y. D., Yin, J., Liu, Z. G.Volume:
104
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4885717
Date:
June, 2014
File:
PDF, 1.07 MB
english, 2014