4H-silicon carbide-dielectric interface recombination...

Journal of Applied Physics 2015 / 03 Vol. 117; Iss. 10

4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption

Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A.
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Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4914521
Date:
March, 2015
File:
PDF, 1.21 MB
english, 2015
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