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Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures
Goyal, Anshu, Kapoor, Ashok K., Raman, R., Dalal, Sandeep, Mohan, Premila, Muralidharan, R.Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4922286
Date:
June, 2015
File:
PDF, 1.46 MB
english, 2015