Electrical Properties of Al/CaF2/i-Diamond...

Japanese Journal of Applied Physics 1998 / 11 Vol. 37; Iss. Part 2, No

Electrical Properties of Al/CaF2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process

Yun, Young, Maki, Tetsuro, Tanaka, Hiroyuki, Shirakawa, Yusuke, Kobayashi, Takeshi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.37.l1293
Date:
November, 1998
File:
PDF, 183 KB
english, 1998
Conversion to is in progress
Conversion to is failed