Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers
Rossmann, H.R., Gysin, Urs, Bubendorf, Alexander, Glatzel, Thilo, Reshanov, Sergey, Schöner, Adolf, Jung, T.A., Meyer, Ernst, Bartolf, HolgerVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.821-823.269
Date:
June, 2015
File:
PDF, 1.24 MB
english, 2015