Effect of O2 flow rate in the annealing process on metal–insulator transition of vanadium oxide thin films
Li, Na, Hu, Ming, Liang, Ji-Ran, Liu, Xing, Wu, Mai-JunVolume:
26
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-015-3310-y
Date:
September, 2015
File:
PDF, 1.34 MB
english, 2015