Enhanced breakdown voltage in InP-HEMTs by using an In0.53(AlxGa1–x)0.47As (x = 0.1, 0.2) quaternary channel
Lai, Li-Shyue, Chan, Yi-JenVolume:
33
Year:
1997
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19971134
File:
PDF, 65 KB
english, 1997