Enhanced breakdown voltage in InP-HEMTs by using an...

Enhanced breakdown voltage in InP-HEMTs by using an In0.53(AlxGa1–x)0.47As (x = 0.1, 0.2) quaternary channel

Lai, Li-Shyue, Chan, Yi-Jen
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Volume:
33
Year:
1997
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19971134
File:
PDF, 65 KB
english, 1997
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