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0.1 [micro sign]m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
Zaknoune, M., Schuler, O., Mollot, F., Théron, D., Crosnier, Y.Volume:
35
Year:
1999
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19990239
File:
PDF, 126 KB
english, 1999