Reduction of epitaxial alignment in n+-p poly-Si emitter...

Reduction of epitaxial alignment in n+-p poly-Si emitter diode due to gettering of P and As by Ar implantation

Lee, Lurng Shehng, Lee, Chung Len
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Volume:
36
Year:
2000
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20000379
File:
PDF, 300 KB
english, 2000
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