Effect of surface passivation of AlGaN∕GaN heterostructure...

Electronics Letters 2002 Vol. 38; Iss. 8

Effect of surface passivation of AlGaN∕GaN heterostructure field-effect transistor

Vertiatchikh, A.V., Eastman, L.F., Schaff, W.J., Prunty, T.
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Volume:
38
Year:
2002
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20020270
File:
PDF, 57 KB
english, 2002
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