Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE
Manfra, M., Weimann, N., Baeyens, Y., Roux, P., Tennant, D.M.Volume:
39
Year:
2003
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20030451
File:
PDF, 60 KB
english, 2003