High quality oxynitride gate dielectrics prepared by...

Electronics Letters 1995 Vol. 31; Iss. 14

High quality oxynitride gate dielectrics prepared by reoxidation of NH3-nitrided SiO2 in N2O ambient

Han, L.K., Kim, J., Yoon, G.W., Yan, J., Kwong, D.L.
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Volume:
31
Year:
1995
Journal:
Electronics Letters
DOI:
10.1049/el:19950806
File:
PDF, 328 KB
1995
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