Resistivity analysis of epitaxially grown, doped...

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Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

S. D. Burnham, E. W. Thomas, W. A. Doolittle
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Year:
2006
Language:
english
DOI:
10.1063/1.2395680
File:
PDF, 668 KB
english, 2006
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