Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon
C. T. M. Kwok, R. D. Braatz, S. Paul, W. Lerch, E. G. SeebauerYear:
2009
Language:
english
DOI:
10.1063/1.3079524
File:
PDF, 1.05 MB
english, 2009