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De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements
D. Gu, T. M. Wallis, P. Blanchard, S. Lim, A. Imtiaz, K. A. Bertness, N. A. Sanford, P. KabosYear:
2011
Language:
english
DOI:
10.1063/1.3597408
File:
PDF, 557 KB
english, 2011