Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
Yang, Yue, Lu Low, Kain, Wang, Wei, Guo, Pengfei, Wang, Lanxiang, Han, Genquan, Yeo, Yee-ChiaVolume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4805051
File:
PDF, 2.19 MB
english, 2013