Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
Tsormpatzoglou, A., Hastas, N. A., Choi, N., Mahmoudabadi, F., Hatalis, M. K., Dimitriadis, C. A.Volume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4831665
File:
PDF, 884 KB
english, 2013