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Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices
Shih, Hong-An, Kudo, Masahiro, Suzuki, Toshi-kazuVolume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4901290
Date:
November, 2014
File:
PDF, 3.63 MB
english, 2014