High stability mechanisms of quinary indium gallium zinc...

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Lee, Ching-Ting, Lin, Yung-Hao, Lin, Jhong-Ham
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Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4906619
Date:
January, 2015
File:
PDF, 1.87 MB
english, 2015
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