Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs...

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IEEE Electron Device Letters 2015

Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer

Benkhelifa, Fouad, Muller, Stefan, Polyakov, Vladimir, Ambacher, Oliver
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Year:
2015
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2459597
File:
PDF, 142 KB
english, 2015
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