![](/img/cover-not-exists.png)
[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Comparison of Second Impact Ionization Phenomena Between 0.18um N- and P-channel MOSFET's
Bravaix, A., Goguenheim, D., Revil, N., Vincent, E.Year:
2000
Language:
english
DOI:
10.1109/essderc.2000.194734
File:
PDF, 184 KB
english, 2000