[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN Junctions
Sorge, R., Heinemann, B., Grabmeier, J., Obermeier, G., Richter, H.Year:
2000
Language:
english
DOI:
10.1109/essderc.2000.194820
File:
PDF, 67 KB
english, 2000