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[IEEE 31st European Solid-State Device Research Conference - Nuremberg, Germany (2001.9.11-2001.9.13)] 31st European Solid-State Device Research Conference - A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate
Difrenza, R., Llinares, P., Morin, G., Granger, E., Ghibaudo, G.Year:
2001
Language:
english
DOI:
10.1109/essderc.2001.195260
File:
PDF, 1.04 MB
english, 2001