[IEEE 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2014.12.3-2014.12.6)] 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) - High field effect mobility of 10,000 cm2/V-s and 5,000 cm2/V-s in undoped and doped monolayer graphene-based transistors
Yadav, Premlata, Srivastava, Pawan Kumar, Ghosh, SubhasisYear:
2014
Language:
english
DOI:
10.1109/icemelec.2014.7151204
File:
PDF, 456 KB
english, 2014