[IEEE 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2015.6.4-2015.6.5)] 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Simulation study of NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate

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