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Gas source molecular beam epitaxy of high quality Al[sub x]Ga[sub 1−x]N (0≤x≤1) on Si(111)
S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, I. Gherasoiu, L. Grave De Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Y. Kudryavtsev, H. TemkinYear:
2001
Language:
english
DOI:
10.1116/1.1377590
File:
PDF, 534 KB
english, 2001