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Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
A. Wilk, M. Zaknoune, S. Godey, S. Dhellemmes, P. Gérard, C. Chaix, F. MollotYear:
2004
Language:
english
DOI:
10.1116/1.1738665
File:
PDF, 915 KB
english, 2004