Ammonia molecular beam epitaxy growth of p-type GaN and...

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Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors

S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, E. M. Hsu, I. Sproule, S. Moisa, M. Beaulieu, J. B. Webb
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Year:
2005
Language:
english
DOI:
10.1116/1.1926307
File:
PDF, 596 KB
english, 2005
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