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Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories
P. Punchaipetch, K. Ichikawa, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, T. HayashiYear:
2006
Language:
english
DOI:
10.1116/1.2198852
File:
PDF, 733 KB
english, 2006