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AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates
T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, L. Covert, J. Lin, S. J. Pearton, P. Bove, H. Lahreche, J. ThuretYear:
2006
Language:
english
DOI:
10.1116/1.2348730
File:
PDF, 908 KB
english, 2006