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Interaction of the end of range defect band with the upper buried oxide interface for B and BF[sub 2] implants in Si and silicon on insulator with and without preamorphizing implant
M. Kah, A. J. Smith, J. J. Hamilton, J. Sharp, S. H. Yeong, B. Colombeau, R. Gwilliam, R. P. Webb, K. J. KirkbyYear:
2008
Language:
english
DOI:
10.1116/1.2816936
File:
PDF, 742 KB
english, 2008