Contact etch stop a-Si[sub x]N[sub y]:H layer: A key factor for single polysilicon flash memory data retention
G. Beylier, D. Benoit, P. Mora, S. Bruyère, G. GhibaudoYear:
2009
Language:
english
DOI:
10.1116/1.3071846
File:
PDF, 695 KB
english, 2009