Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 1
Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation
Kudo, Takashi, Ito, Takashi, Nakajima, AnriVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4773576
File:
PDF, 994 KB
english, 2013