Local oxide capacitance as a crucial parameter for...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2013 Vol. 31; Iss. 1

Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

Starkov, Ivan, Enichlmair, Hubert
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4774106
File:
PDF, 1.75 MB
english, 2013
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