Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 2
Device instability of postannealed TiOx thin-film transistors under gate bias stresses
Du Ahn, Byung, Ok, Kyung-Chul, Park, Jin-Seong, Chung, Kwun-BumVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4790572
File:
PDF, 1.48 MB
english, 2013